METHOD FOR FABRICATING CAPACITOR LOWER ELECTRODE OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a capacitor lower electrode of a semiconductor memory device is provided to prevent a bridge between lower electrodes by removing an apex of a conductive layer. CONSTITUTION: An interlayer dielectric(100) is formed on a surface of a semiconductor substrate. A contact hole is formed on the interlayer dielectric(100). A doped polysilicon is buried therein. A contact plug(110) is formed by performing a chemical mechanical polishing process. A sacrificial insulating layer(112) is formed on a whole surface of the substrate. An aperture is formed on the sacrificial insulating layer(112). A polysilicon as a conductive layer is formed on the sacrificial insulating layer(112) having the aperture. A gap-fill layer is formed on the conductive layer. The gap-fill layer and the conductive layer are polished. An apex of the conductive layer is removed by performing an H2 annealing process. A concavo-convex portion(122) is formed on the conductive layer by performing a selective MPS(Meta-Stable Polysilicon) process and a lower electrode(120a) is formed thereon.