| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern formation method for forming a pattern where unevenness is reduced on a sidewall by a multilayer resist process. SOLUTION: This pattern formation method includes a process for forming a lower-layer film (103) that contains carbon on a silicon wafer (101), a process for forming a middle film (104) that has the connection between silicon elements in a main chain and at the same time contains a silicon compound including a unit having elimination properties on the lower-layer film by the coating method, a process for eliminating the unit having elimination properties of the silicon compound, a process for forming a resist film (106) on the uniformized, middle film (105), a process for forming a resist pattern (107) by carrying out pattern exposure and processing to the resist film, a process for using the resist pattern as a mask for processing the middle film to obtain a middle film pattern (108), and a process for using the middle film pattern as the mask for processing the lower-layer film to obtain a lower-layer film pattern (109). |
