METHOD FOR MANUFACTURING THIN FILM TRANSISTOR HAVING VERY THIN ACTIVATION LAYER

摘要

PURPOSE: A fabrication method of TFTs(Thin Film Transistors) is provided to improve an operational characteristic, a manufacturing time, and a manufacturing cost by forming a thin active layer without a damage. CONSTITUTION: After forming a gate electrode(32) on a substrate(31), an isolating layer(33), an active layer(34) and an n+ doped layer(35) are sequentially and continuously formed. Then, a pattern is formed to enclose the upper portion of the gate electrode(32) by selectively etching the n+ doped layer(35) and the active layer(34). After depositing a metal layer(36) on the entire surface of the resultant structure, a source and a drain are formed on the resultant structure with a defined interval each other by selectively removing the metal layer(36). Then, the active layer(34) is partially exposed without a damage by selectively etching the n+ doped layer(35) using a high etch selectivity rate of the active layer(34).