| 摘要 |
PURPOSE: A thin film formation method of semiconductor devices is provided to effectively remove surface impurities by simultaneously performing a thin film formation and a surface treatment processes. CONSTITUTION: A polymer metal source is supplied to a chamber of an MOCVD(Metal Organic Chemical Vapor Deposition) via a carrier gas, and a wafer is heated to a desired temperature. A plasma chamber divided to the chamber of the MOCVD is generated to DC or RF plasma due to mixed gases of hydrogen and nitrogen, and supplied to the surface of the wafer. At this time, the processes are simultaneously performed, so that the surface impurities are removed. Also, a TDMAT(Tetrakis Dimethylamino Titanium) is used as the polymer metal source.
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