发明名称 CAPACITOR AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A capacitor and a method for manufacturing the same are provided to prevent a short between electrodes and a damage of a dielectric film by depositing an insulating layer on an upper plate electrode. CONSTITUTION: A lower electrode(22), a dielectric film(23) and an upper electrode(24) are sequentially stacked on a substrate(20). After depositing an insulating layer on the upper electrode, a photoresist pattern is coated on the resultant structure. An insulating pattern(25) is formed by selectively etching the photoresist pattern as a mask. After removing the photoresist pattern, the upper electrode(24) is selectively etched by using the insulating pattern as a mask.
申请公布号 KR20020058574(A) 申请公布日期 2002.07.12
申请号 KR20000086684 申请日期 2000.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, BAN SEOK
分类号 H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/8242
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