| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve a step coverage of dual damascence processes by using a non-planarized and a planarized BARC(Bottom Anti-Reflective Coating) films. CONSTITUTION: A plurality of gates(12) are formed on a semiconductor substrate(11). After forming an interlayer dielectric(14) on the resultant structure, contact holes having different sizes are formed by selectively etching the interlayer dielectric. A non-planarized BARC film(16) is firstly filled into the contact holes, and a planarized BARC film(17) is secondly filled into the contact holes. Then, a photoresist layer(18) is coated so as to fill completely into the contact holes. The photoresist layer(18), the planarized BARC film(17) and the non-planarized BARC film(16) are then removed, and a conductive layer is filled into the contact holes.
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