| 摘要 |
PURPOSE: An image sensor is provided to improve a photo-sensitivity by increasing a photodiode size without an increase of a unit pixel. CONSTITUTION: An image sensor comprises a p-type semiconductor substrate(50), a field oxide(51) formed on the semiconductor substrate(50) for isolating between pixels, an n-type dopant doped region(52) of a photodiode formed in the deep portion of the semiconductor substrate(50), a transfer transistor gate electrode(53A) and a reset transistor gate electrode(53B) respectively formed on the upper surface of the semiconductor substrate(50), a p-type dopant doped region(54) having a smaller size than the n-type dopant doped region(52) formed to be completely overlapped with the n-type dopant doped region(52) and to be partially overlapped with the transfer transistor gate electrode(53A), and an n-type floating region(55) between the transfer transistor gate electrode(53A) and the reset transistor gate electrode(53B) in the semiconductor substrate(50). At this time, the n-type dopant doped region(52) has a bigger size than the p-type dopant doped region(54), thereby improving a photo-sensitivity.
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