发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, CONTACT STRUCTURE, AND METHOD OF FORMING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be decreased in contact resistance and high in reliability by increasing a contact surface area between a conductor layer and a conductive member, and also to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a cell plate layer 5 formed in an insulating films 10 and 11 on a semiconductor substrate 4, a connection hole 12 formed as passed through the insulating films 10 and 11 and the cell plate layer 5, and a conductor plug 7A formed to expose the periphery, e.g. upper surface of the layer 5 contacted with the connection hole 12 and so that a conductor is filled in the connection hole 12. |
申请公布号 |
JP2002198421(A) |
申请公布日期 |
2002.07.12 |
申请号 |
JP20000393077 |
申请日期 |
2000.12.25 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TAKEWAKA HIROMOTO;KAMOSHIMA TAKAO;IZUMITANI JUNKO |
分类号 |
H01L21/768;H01L21/8242;H01L23/522;H01L27/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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