发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which user interface including control of a defective sector can be easily performed. SOLUTION: A nonvolatile semiconductor memory is provided with at least a table memory constituting an address conversion table converting a logic sector address externally inputted to a physical sector address, an address decoder outputting the prescribed selecting signal in accordance with the physical sector address outputted from the table memory, a memory matrix provided with a plurality of sectors of which the storage regions are divided, and a data register performing delivery/receiption of data to/from the memory matrix as necessary, in the table memory, an address conversion table constituted there is read out in accordance with an input of the logic sector address, and the physical sector address corresponding to the logic sector address is outputted to the address decoder.</p>
申请公布号 JP2002197890(A) 申请公布日期 2002.07.12
申请号 JP20000394502 申请日期 2000.12.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIMURA YOSHIMASA
分类号 G06F12/16;G06F12/00;G06F12/02;G11C16/02;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G06F12/16
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