| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor relay whose configuration is suitable to its high-speed switching, especially to shortening of its OFF time. SOLUTION: In the semiconductor relay, the source of a driving MOSFET 7 provided in a charging/discharging control circuit 3 is connected electrically with a silicon polycrystal body 13 exposed in the surface layer wherein a photodiode array 2 is formed. Consequently, when the photovoltaic force of the array 2 is extinguished, the charges accumulated in the capacitor elements having as their dielectric films dielectric separation films 15 are so discharged that when the semiconductor relay is brought into its OFF state there is generated apparent a current IDI passing through a resistor 8 whose polarity is opposed to a current ISC flowing through the resistor 8.</p> |
