发明名称 SUPERNARROW BAND, TWO CHAMBER, HIGH REP RATE GAS DISCHARGE LASER SYSTEM
摘要 PROBLEM TO BE SOLVED: To generate a high-quality pulse laser beam by a pulse speed of approximately 4,000 Hz or more, and a pulse energy of approximately 5 mJ or more. SOLUTION: Two discharge chambers are provided. One is a portion of a main oscillator for generating a supernarrow band seed beam, and the seed beam is amplified in a second discharge chamber. The discharge chambers can be independently controlled so that individual optimization in a wavelength parameter of the main oscillator, and optimization in the pulse energy parameter of an amplification chamber can be made. A preferred embodiment is an ArF excimer laser system that is composed as an MOPA, and is specially designed for a light source for integrated-circuit lithography. In an MOPA embodiment, each chamber has a single tangential fan for generating gas flow that can be operated by a pulse speed of 4,000 Hz or more by removing a residue from a discharge region at time that is less than approximately 0.25 mm between pulses.
申请公布号 JP2002198604(A) 申请公布日期 2002.07.12
申请号 JP20010311982 申请日期 2001.10.09
申请人 CYMER INC 发明人 MYERS DAVID W;BESAUCELE HERVE A;ERSHOV ALEXANDER I;PARTLO WILLIAM N;SANDSTROM RICHARD L;DAS PALASH P;ANDERSON STUART L;FOMENKOV IGOR V;UJAZDOWSKI RICHARD C;PAN XIAOJIANG J;ONKELS ECKEHARD D;NESS RICHARD M;BROWN DANIEL J W
分类号 G01J9/00;G03F7/20;H01S3/00;H01S3/03;H01S3/036;H01S3/038;H01S3/04;H01S3/041;H01S3/08;H01S3/0943;H01S3/097;H01S3/0971;H01S3/0975;H01S3/102;H01S3/104;H01S3/105;H01S3/1055;H01S3/11;H01S3/13;H01S3/131;H01S3/134;H01S3/137;H01S3/139;H01S3/22;H01S3/223;H01S3/225;H01S3/23;(IPC1-7):H01S3/23 主分类号 G01J9/00
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