| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents damage to a gate insulating film, easily controls a threshold, and achieves sufficiently low resistance in a gate electrode, and to provide a method for manufacturing the semiconductor device. SOLUTION: An N-type impurity region (source/drain region) 13 is formed on a P-type semiconductor substrate 11 separated by a channel region 12. A gate oxide film 14 is formed on the channel region 12. A polysilicon layer 15 is formed on the gate oxide film 14 while the polysilicon layer 15 has only a specific thickness and at the same time forms the sidewall of the gate electrode. A metal layer 16 is formed at the center section of a lamination electrode so that the metal layer 16 is held by the polysilicon layer 15.
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