SEMICONDUCTOR MANUFACTURING METHOD INCLUDING PROCESS FORMING CONTACT HOLES BY USING CH2F2 GAS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that can prevent damage of the top of a contact hole due to the loss of a photo resist mask sidewall by intentionally forming a polymer layer with a constant thickness on a top and a sidewall of a photo resist mask as an anti-reflective layer(ARL), an upper layer of an oxide film, is etched until a constant depth by a plasma etching including a CH2F2 gas when the ARL is etched. SOLUTION: This manufacturing method of contact holes in a semiconductor device includes a process (i) forming polymer layers on sidewalls and upper surfaces of a photo resist mask as etching the oxide in the lower position when a photo resist mask is formed, so as to form contact holes by using a etching gas as supplying a CH2F2 gas simultaneously and a process (ii) etching the oxide furthermore by only the etching gas without supply of the CH2F2 gas, and this manufacturing method can prevent a top erosion and a striation which would occur in the etching process.