发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To realize a wiring layer which can reduce a parasitic capacitance between wirings. SOLUTION: A wiring layer wherein a damascene wiring structure having high-level wirings 14 and 15 and a damascene wiring structure having low-level wirings 9 and 10 is formed, and a distance L between the two adjacent damascene wirings structures is set to be long.
申请公布号 JP2002198422(A) 申请公布日期 2002.07.12
申请号 JP20000396015 申请日期 2000.12.26
申请人 TOSHIBA CORP 发明人 SETA SHOJI
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/768;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/768;H01L21/306 主分类号 H01L21/28
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