| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method that does not deteriorate a processing shape of an aluminum film containing copper, which is wiring, and can suppress occurrence of copper residues. SOLUTION: In this dry etching method of the aluminum film containing copper, the gas staying time of a chlorine gas in a plasma reaction chamber is limited between 0.15 seconds and 0.3 seconds.
|
