REFORMING METHOD FOR ANTIFERROMAGNETIC LAYER AND EXCHANGE COUPLED ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an exchange coupled element which has a high unidirectional anisotropy constant Jk, high blocking temperature TB, and small film thickness and a reforming method for an antiferromagnetic layer. SOLUTION: The reforming method for the antiferromagnetic layer is characterized in that the antiferromagnetic layer is formed on a base body and thermally processed in a vacuum atmosphere of <=10-9 Torr in initial vacuum degree.