| 摘要 |
PURPOSE: A static-electricity protection circuit is provided to react at a small static-electricity capable of producing an effect on the inner of a semiconductor device by decreasing a trigger operation voltage. CONSTITUTION: A static-electricity protection circuit comprises the first resistance(R1) connected with a pad(PAD) and an emitter of a PNP transistor(51), the second resistance(R2) connected with the pad(PAD), a base of the PNP transistor(51) and a collector of an NPN transistor(52), the fourth resistance(R4) connected with a ground(GND) and an emitter of the NPN transistor(52), and the third resistance(R3) connected with the ground(GND), a collector of the PNP transistor(51) and a base of the NPN transistor(52). At this point, collector and base junctions(N1,N2) between the PNP transistor(51) and the NPN transistor(52) are respectively made of an n+ region and a p+ region, so that a junction break voltage is low, thereby by-passing a flowed static-electricity enough to have an influence on the device through the ground(GND).
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