| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SIDEWALL FIN |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual-gate transistor having a relatively thin epitaxial growth channel. SOLUTION: The epitaxial growth channel is formed, and then a damascene gate is formed, thus forming a silicon-on-insulator(SOI) MOSFET of a dual gate. In the dual-gate MOSFET, a narrow channel should be provided, thus increasing a current drive per layout width, and achieving low out conductance.
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| 申请公布号 |
JP2002198538(A) |
申请公布日期 |
2002.07.12 |
| 申请号 |
JP20010319845 |
申请日期 |
2001.10.17 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
ADKISSON JAMES W;AGNELLO PAUL D;ARNE W BALLANTINE;DIVAKARUNI RAMA;JONES ERIN C;NOWAK EDWARD J;RANKIN JED H |
| 分类号 |
H01L29/161;H01L21/336;H01L21/8234;H01L21/84;H01L27/08;H01L27/088;H01L27/092;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L29/786;H01L21/823 |
主分类号 |
H01L29/161 |
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