SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an MFS type FET capable of easily securing a saturated drain current with less read disturbance. SOLUTION: A nonvolatile semiconductor storage element is provided with a floating gate electrode 9 and a dielectric capacitor 2 and a ferroelectric capacitor 3 respectively connected to the floating gate electrode 9. By applying a voltage between a first polarization voltage supply terminal 4 and a second polarization voltage supply terminal 5, polarization serving as information is generated in the ferroelectric film of the ferroelectric capacitor 3. Also, when a read voltage is applied between a ground terminal 7 and a power supply voltage terminal 8 connected to source/drain regions, an MISFET is turned either on or off corresponding to the charge holding state of the floating gate electrode 9, and thus the information within the floating gate electrode 9 is read.