EXHAUST ELECTRODE FOR DRY ETCHING APPARATUS AND PROCESS CHAMBER OF DRY ETCHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR APPARATUS

摘要

PURPOSE: An exhaust electrode for dry etching apparatus and process chamber of dry etching apparatus for manufacturing semiconductor apparatus is provided to uniformly form a plasma on a wafer by symmetrically forming a plurality of exhaust outlets around an electrode. CONSTITUTION: An electrode plate(12) is attached to an upper side of a housing(13). A plurality of exhaust outlets(14) connected to an exhaust tube(14) is symmetrically formed to a side wall of the housing(13). A plasma having a uniform ion density is formed on the electrode plate(12) because a plurality of exhaust outlets(14) connected to the exhaust tube(14) is symmetrically formed to the side wall of the housing(13). A wafer(5) located on the electrode plate(12) is uniformly etched because a plurality of exhaust outlets(14) connected to the exhaust tube(14) is symmetrically formed to the side wall of the housing(13).