METHOD FOR FABRICATING SINGLE ELECTRON TUNNELING TRANSISTOR OPERATED UNDER NORMAL TEMPERATURE USING FOCUS ION BEAM

摘要

PURPOSE: A method for fabricating a single electron tunneling transistor operated under normal temperature using focus ion beam is provided to form the single electron tunneling transistor operated under normal temperature by using a focus ion beam. CONSTITUTION: An insulating layer(20) and a conductive layer are formed on a substrate(10). The conductive layer is patterned to expose the insulating layer(20). A source electrode(30b), a drain electrode(30c), and a gate electrode(30a) are formed by patterning the conductive layer. A single electron tunnel junction(60) and a capacity junction(70) are formed by irradiating a Ga+ focus ion beam. The single electron tunnel junction(60) is formed between the source electrode(30b) and the drain electrode(30c). The capacity junction(70) is formed between the single electron tunnel junction(60) and the gate electrode(30a).