| 摘要 |
PURPOSE: A fabrication method of a Ru metal film as a lower electrode is provided to improve a deposition speed and a step-coverage by using an ICCS(In-Situ Step Changing) CVD(Chemical Vapor Deposition). CONSTITUTION: In a formation method of a Ru metal film as a lower electrode of a capacitor, the Ru metal film is deposited by an ICCS(In-Situ Step Changing) CVD method using a Ru precursor. At this time, the Ru precursor is used of Ru(od)3, Ru(etcp)2. Preferably, the processing pressure is 0.1Torr-10Torr, the deposition temperature is 200-500°C, the processing gases are O2, N2O, NH3, Ar, N2, H2 and He, the flow rate of the gases is 10-3000 sccm, and the temperature of the vaporizer is 5 0-350°C.
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