| 摘要 |
PURPOSE: A fabrication method of a ferroelectric capacitor is provided to improve electrical properties of the ferroelectric capacitor by controlling a crystal orientation of a BLT dielectric film. CONSTITUTION: After forming source and drain regions(11), a field oxide(12), a gate oxide(13) and a gate electrode(14) on a substrate(10), the first and the second interlayer dielectric(15,17) having a contact hole are sequentially formed on the resultant structure. A polysilicon plug(18), a silicide layer(19) and a diffusion barrier(20) are sequentially filled into the contact hole. Then, a lower electrode(21), a BLT ferroelectric film(22) and an upper electrode(23) are sequentially formed on the resultant structure. An annealing processing is then performed so as to restrain a c-axis orientation of the BLT ferroelectric film(22).
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