METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A DRAM(dynamic random access memory) fabrication method is provided to prevent a short between a contact plug and a gate electrode and to improve an overlay accuracy by forming the contact plug using CMP. CONSTITUTION: A semiconductor substrate(11) has a gate electrode(17) of polycide structure and a masking insulator(21). A flattening layer(27) is formed on the semiconductor substrate(11), and the flattening layer(27) formed on an active region is removed by using a photoresist pattern(29) to exposed the active region of the substrate as a mask. Then, a conductive layer(31a) is formed on the resultant structure. By performing CMP process using the masking insulator(21) formed on the gate electrode(17) as a polishing stopper, a contact plug(31b) is formed.