| 摘要 |
PURPOSE: An inner cylindrical capacitor formation method is provided to improve a uniformity of capacitance and to prevent contamination. CONSTITUTION: A USG(Undoped Silicate Glass) layer(22) as a sacrificial layer is formed on a lower layer(21) of a silicon substrate(20). A storage electrode formation region is defined by selectively etching the USG layer(22). A polysilicon layer(25) is formed on the resultant structure. A photoresist(26) is coated so as to gap-fill on the resultant structure. The polysilicon layer(25) is isolated by etch-back the sacrificial layer and the polysilicon layer. After removing the sacrificial layer(22) and the photoresist(26), a dielectric film and a plate electrode are sequentially formed.
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