| 摘要 |
PURPOSE: A fabrication method of a ferroelectric capacitor is provided to prevent an oxidation of a plug by reducing temperature of recovery annealing using multi-step recovery annealing processes. CONSTITUTION: A recessed polysilicon plug(18) is formed in a contact hole. A silicide layer(19) and a diffusion barrier(20) are sequentially formed on the recessed polysilicon plug. After depositing an adhesive layer(21) on the resultant structure, the diffusion barrier(20) is exposed by selectively etching the adhesive layer. A lower electrode(22), a ferroelectric film(23) and an upper electrode(24) are sequentially formed on the resultant structure. Then, multi-step recovery annealing processes are performed for recovering properties of ferroelectric thin film.
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