发明名称 RESIST PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern that has superior adhesion to a lower layer, and at the same time profile with an ideal rectangular section without peeling even if resist having strong hydrophobic properties is used. SOLUTION: This resist pattern formation method includes a process for forming a lower-layer film (103) having polymer containing fluorine on a wafer substrate (101), a process for forming a resist film (104) on the lower-layer film, and a process for allowing the resist film to be subjected to pattern exposure and processing for obtaining the resist pattern (105).
申请公布号 JP2002198283(A) 申请公布日期 2002.07.12
申请号 JP20000392888 申请日期 2000.12.25
申请人 TOSHIBA CORP 发明人 SATO YASUHIKO
分类号 G03F7/11;H01L21/027 主分类号 G03F7/11
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