| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having such heat-radiation structure as capable of coping with increase of heating density caused by higher integration, density, and electric power of an integrated circuit chip, especially that for microwave/milliwave band high-frequency power amplifiers in which an integrated circuit chip is flip chip mounted, by solving such problems as degrading a heat-radiation characteristics when it is downsized because of high-frequency characteristics. SOLUTION: There are provided a circuit board 5 where at least one integrated circuit chip 1 is flip-chip mounted, a sealing cap 7 which is coupled with the circuit board 5 to shield the integrated circuit chip 1 from an external environment, and a heat sink 11. Further, a heat absorbing device 10 is interposed between the circuit board 5 and the heat sink 11, to assure sufficient heat-absorbing area and for adjusting a heat radiation ability.</p> |
