发明名称 |
MEMORY CELL DECODER, SEMICONDUCTOR MEMORY PROVIDED WITH THIS DECODER AND HIGH VOLTAGE SUPPLY METHOD FOR NONVOLATILE SEMICONDUCTOR MEMORY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a memory cell decoder in which layout area is reduced by omitting an electric charge pump, while a high voltage signal can be supplied without deteriorating an operation characteristic even in low power source voltage. SOLUTION: A memory cell decoder is provided with a first node, a first transmitting section outputting a high voltage signal to the first node responding to activation of at least one first selection signal selecting a memory cell decoder, a control section generating a first control signal selecting a memory cell decoder responding to an address and discharging a signal of the first node when this first control signal is activated, and a second transmitting section outputting a word line enable signal enabling the word line responding to a signal of the first node when the first selection signal and the first control signal are activated to a memory cell.</p> |
申请公布号 |
JP2002197882(A) |
申请公布日期 |
2002.07.12 |
申请号 |
JP20010350216 |
申请日期 |
2001.11.15 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KEN SHAKUSEN |
分类号 |
G11C16/06;G11C8/10;G11C16/08;G11C16/30;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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