THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A thin film transistor and a method for fabricating the same are provided to lower crystallization temperature of an amorphous silicon layer below 450 degrees centigrade by increasing a crystallization speed. CONSTITUTION: A buffer layer(102) and an amorphous silicon layer(104) are formed by depositing the first insulating material and an amorphous silicon on a substrate(100). A catalytic metal(108) is deposited on the amorphous silicon layer(104). The catalytic metal(108) is selected from a ferromagnetic group including Ni, Pb, and Co. A magnetic field formation device(109) is installed on thereon. Ni atoms are rapidly diffused on the amorphous silicon layer(104) if direct current of high voltage is applied to the catalytic metal(108) and the magnetic field formation device(109) generates a magnetic field on the substrate(100).