METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a side undercut phenomenon of an upper insulating layer and defects generated from an etch back process. CONSTITUTION: One string is formed by connecting a multitude of cell transistors between a bit line contact hole(118) and a common source line, sequentially. One block is formed by connecting a multitude of strings, in parallel. The blocks are arranged at both sides of the bit line contact hole(118). An active region is separated from a field region. A string select line and a ground select line are formed at outsides of the first word line(W/L0) and the n-th word line(W/Ln). A drain of a string select transistor is connected with a bit line(136). A source of a ground select transistor is connected with a common source line. The common source line is connected with a common source region through a common source contact hole(112). The common source regions are connected with source regions of each transistor through a metal wiring layer(138). In a cell transistor, a floating gate(104) is formed by inserting a tunnel oxide layer(103) into a substrate(100). A control gate(108) is formed by inserting a dielectric layer(106) into the floating gate(104).