| 摘要 |
An etching chamber has a lower electrode section and an upper electrode section. A semiconductor wafer WF is mounted on the lower electrode section. An outer ring including a silicon (Si) ring disposed around the lower electrode section to provide a positioning assistance in mounting the semiconductor wafer WF, and an aluminum (Al) ring disposed under the Si ring. The Si ring virtually expands the area of a wafer WF when plasma is generated, such that unstable plasma around the wafer can be stabilized. To reduce localized abrasion and further stabilize plasma, the Si ring has a height-changing portion. The height-changing portion is formed of a curved surface in the innermost part and function to position the wafer WF.
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