| 摘要 |
Disclosed is a projection exposure apparatus which includes an illumination optical system for illuminating a pattern of a reticle with laser light from a continuous emission excimer laser, a projection optical system for projecting the illuminated pattern onto a substrate, and an adjusting unit for adjusting an optical characteristic of the projection optical system in accordance with a change in wavelength of the laser light. The projection optical system is provided by a lens system being made of a substantially single glass material. A wavelength monitor detects the emission wavelength of the excimer laser, on the basis of which the optical characteristic of the projection optical system is adjusted.
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