发明名称 |
Method of enhancing hardness of sputter deposited copper films |
摘要 |
The present invention provides a method and apparatus for forming a copper layer on a substrate, preferably using a sputtering process. The sputtering process involves bombarding a conductive member of enhanced hardness with ions to dislodge the copper from the conductive member. The hardness of the target may be enhanced by alloying the copper conductive member with another material and/or mechanically working the material of the conductive member during its manufacturing process in order to improve conductive member and film qualities. The copper may be alloyed with magnesium, zinc, aluminum, iron, nickel, silicon and any combination thereof.
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申请公布号 |
US2002088716(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20020092097 |
申请日期 |
2002.03.06 |
申请人 |
PAVATE VIKRAM;ABBURI MURALI;NARASIMHAN MURALI;RAMASWAMI SESHADRI |
发明人 |
PAVATE VIKRAM;ABBURI MURALI;NARASIMHAN MURALI;RAMASWAMI SESHADRI |
分类号 |
C23C14/34;C23C14/35;H01L21/203;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):C23C14/32;C23C28/02 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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