发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD FOR CONTROLLING INPUT/OUTPUT OF DATA OF THE SAME |
摘要 |
PURPOSE: A non-volatile memory device and a method for controlling input/output of data of the same are provided to change a column address in an input/output process of data by improving a structure of the non-volatile memory device. CONSTITUTION: An address buffer circuit(110) stores data provided to input/output pins as addresses. A column address register(140) receives data stored in the address buffer circuit(110) as column addresses and increases the inputted column addresses, sequentially. A selection circuit(150,170) selects groups of latches in response to the column addresses output from the column address register(140). A data input/output circuit(180) transmits the data received from the input/output pins to the selected latches or transmits the data stored in the selected latches to the input/output pins. A control portion(190,200,210,220,230) controls the address buffer circuit(110) and the column address register(140) in order to store external addresses provided to the input/output pins into the column address register(140).
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申请公布号 |
KR20020057355(A) |
申请公布日期 |
2002.07.11 |
申请号 |
KR20010000346 |
申请日期 |
2001.01.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, YEONG JUN;KWON, SEOK CHEON |
分类号 |
G11C16/02;G11C16/06;G11C16/08;G11C16/10;G11C16/26;(IPC1-7):G11C16/08 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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