PROCESSING METHOD FOR FORMING DISLOCATION-FREE SILICON-ON-INSULATOR SUBSTRATE PREPARED BY IMPLANTATION OF OXYGEN

摘要

A SIMOX semiconductor structure is provided that may include a silicon substrate, a doped glass layer formed on the silicon substrate by ion implantation and a silicon layer formed on the silicon substrate. Ion implantation may form the doped glass layer to reduce the dislocation density of the silicon layer.