| 摘要 |
PURPOSE: A method of fabricating a TFT-LCD and a mask used for the method are provided to prevent gate and data lines and source and drain electrodes from being double-etched by forming a semi-half tone region. CONSTITUTION: A gate(50), a gate insulating layer(11), an active layer(13,15), and a metal layer(17a) for forming source and drain electrodes are sequentially formed on an insulating substrate(100). A photoresist film is coated on the metal layer, exposed and developed to form a photoresist pattern(19a) including a half tone region and a semi-half tone region. The half tone region is thinner than the photoresist film and placed on a region where a channel will be formed. The semi-half tone region is located on a portion of the metal layer to be source and drain electrodes. The exposed metal layer and active layer are etched using the photoresist pattern as an etch mask, to form the source and drain electrode and the channel.
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