发明名称 Charge pump circuit for improving switching characteristics and reducing leakage current and phase locked loop having the same
摘要 A charge pump circuit capable of improving the matching and switching characteristics, charge current, and discharge current and reducing leakage current and a phase locked loop including the charge pump circuit. In one aspect, the charge pump circuit comprise a first current source for sourcing current to an output terminal of the charge pump circuit in response to first bias voltage, a first switching device which is switched in response to a first control signal and a pull-down device for pulling down the voltage of a connection node of the first switching device between the first current source in response to the first control signal. In another aspect, the charge pump circuit comprises a second current source for sinking current from the output terminal of the charge pump circuit in response to second bias voltage, a second switching device which is switched in response to a second control signal and a pull-up device for pulling up the voltage of a connection node between the second switching device and the second current source in response to the second control signal.
申请公布号 US2002089382(A1) 申请公布日期 2002.07.11
申请号 US20010946701 申请日期 2001.09.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG SUNG-GI
分类号 H03K17/04;H03L7/089;H03L7/093;(IPC1-7):H03L7/093 主分类号 H03K17/04
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