Method and resulting device for manufacturing for double gated transistors

摘要

A process for forming an integrated circuit device structure. The process includes forming a first gate layer on a thickness of material on a donor substrate. The donor substrate has a cleave region underlying the gate layer. The process also includes joining the donor substrate to a handle substrate where the gate layer face the handle substrate; and separating the thickness of material at the cleave region from the donor substrate to define a handle substrate comprising the gate layer and an overlying thickness of material. The process forms a plurality of second gate structures on the thickness of material, where at least one of the first gate structures facing one of the second gate structures forming a channel region therebetween.