| 摘要 |
<p>A spin valve sensor (400) is provided with a negative ferromagnetic coupling field -HFC for properly biasing a free layer and a spin filter (302) layer is employed between the free layer (222) and a capping layer for increasing the magnetoresistive coefficient dr/R of the spin valve sensor. A top portion (402) of the free layer is oxidized for improving the negative ferromagnetic coupling field HFC when the spin filter layer is employed for increasing the magnetoresistive coefficient dr/R.</p> |
