发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to increase a process margin and to decrease defects found in the final electrical test, by preventing a critical dimension of an exposure process for forming a photoresist pattern from being changed after a heat treatment process. CONSTITUTION: A cell region and a core region are defined in a substrate. A photoresist layer is applied on the substrate to form a buffer region having no photoresist in the end of the cell region. A soft bake process and an exposure process are performed. A pose exposure bake(PEB) process is performed at a temperature lower than that of the soft bake process to measure the critical dimension.
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申请公布号 |
KR20020057222(A) |
申请公布日期 |
2002.07.11 |
申请号 |
KR20000087511 |
申请日期 |
2000.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HEON JUN;KIM, JIN HA |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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