发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to increase a process margin and to decrease defects found in the final electrical test, by preventing a critical dimension of an exposure process for forming a photoresist pattern from being changed after a heat treatment process. CONSTITUTION: A cell region and a core region are defined in a substrate. A photoresist layer is applied on the substrate to form a buffer region having no photoresist in the end of the cell region. A soft bake process and an exposure process are performed. A pose exposure bake(PEB) process is performed at a temperature lower than that of the soft bake process to measure the critical dimension.
申请公布号 KR20020057222(A) 申请公布日期 2002.07.11
申请号 KR20000087511 申请日期 2000.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HEON JUN;KIM, JIN HA
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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