| 发明名称 |
THICK OXIDE LAYER ON BOTTOM OF TRENCH STRUCTURE IN SILICON |
| 摘要 |
A gate isolation structure of a semiconductor device and method of making the same provides a trench (10) in a silicon substrate, wherein a dielectric layer is formed on sidewalls (11) and bottom (17) of the trench, the dielectric layer having a first thickness on the sidewalls and a second thickness at the bottom that is greater than the first thickness.
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| 申请公布号 |
WO0215280(B1) |
申请公布日期 |
2002.07.11 |
| 申请号 |
WO2001US25698 |
申请日期 |
2001.08.15 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
HURST, HENRY, W.;MURPHY, JAMES, J. |
| 分类号 |
H01L29/78;H01L21/00;H01L21/336;H01L27/108;H01L29/423;H01L29/76;H01L29/768;H01L31/062;(IPC1-7):H01L29/768 |
主分类号 |
H01L29/78 |
| 代理机构 |
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