发明名称 |
Field-effect transistor and corresponding manufacturing method |
摘要 |
A field effect transistor having a variable doping profile is presented. The field effect transistor is integrated on a semiconductor substrate with a respective active area of the substrate including a source and drain region. A channel region is interposed between the source and drain regions and has a predefined nominal width. The effective width of the channel region is defined by a variable doping profile.
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申请公布号 |
US2002089006(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20020090978 |
申请日期 |
2002.03.04 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PIO FEDERICO;ZULIANI PAOLA |
分类号 |
H01L21/762;H01L29/10;(IPC1-7):H01L27/108;H01L29/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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