发明名称 ADDITION OF POWER AT SELECTED HARMONICS OF PLASMA PROCESSOR DRIVE FREQUENCY
摘要 <p>A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signals. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.</p>
申请公布号 WO2002054835(A2) 申请公布日期 2002.07.11
申请号 US2001047487 申请日期 2001.12.17
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址
您可能感兴趣的专利