Thin-film circuit substrate and method of producing same

摘要

A surface modification layer having a surface modification coefficient of 0.1 to 0.5 is formed on the surface of an organic insulating film on a substrate. A metal wiring is provided on the surface of the organic insulating film having the surface modification layer formed at the surface thereof. Thus, the bonding strength between the metal wiring and the organic insulating film is enhanced. The surface modification coefficient is the ratio of C atoms constituting functional groups, and is a value obtained by calculation according to the following formula.surface modification coefficient=the total number of functional groups/the total number of C atoms present at the surface of an organic insulating film.