发明名称 OPTICAL ASSIST FEATURE FOR TWO-MASK EXPOSURE LITHOGRAPHY
摘要 The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.
申请公布号 WO02054150(A2) 申请公布日期 2002.07.11
申请号 WO2001US43941 申请日期 2001.11.13
申请人 INTEL CORPORATION;TEJNIL, EDITA 发明人 TEJNIL, EDITA
分类号 G03F1/00;G03F1/30 主分类号 G03F1/00
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