SILICON CARBIDE SINGLE CRYSTAL, AND METHOD AND APPARATUS FOR PRODUCING THE SAME

摘要

A method for producing a silicon carbide single crystal, which comprises placing a raw material (40) for sublimation on the container body (12) side in a graphite crucible (10), arranging a seed crystal of a silicon carbide single crystal on the lid (11) side in a graphite crucible (10), subliming a raw material (40) for sublimation by a first induction heating coil (21), and re-crystallizing the raw material (40) for sublimation only in the vicinity of the seed crystal by using a second induction heating coil (20), to thereby grow a silicon carbide single crystal (60) while maintaining the shape of whole the growing surface of the crystal to be convex over the whole growth process. The method allows the production of a wide-bore and high quality silicon carbide single crystal free from the contamination of a polycrystalline or polymorph material and the generation of a defect such as a micropipe with causing no cracks with good efficiency.