发明名称 POWER AMPLIFICATION BIAS CIRCUIT FOR MOBILE COMMUNICATION TERMINAL
摘要 PURPOSE: A power amplification bias circuit for a mobile communication terminal is provided to maintain a bias constantly without regard to temperature variation by using a transistor for performing a feedback of bias in a bias circuit. CONSTITUTION: A first transistor(Q1) performs a feedback of a bias permitted into a power amplifier. A second transistor(Q2) restricts bias variation in interlocking with the first transistor(Q1). A first power supply unit(V1) supplies a collector of the first transistor(Q1) and a base of the second transistor(Q2) with power. A second power supply unit(V2) supplies a collector of the second transistor(Q2) with power. A bias permitting tap(BI) permits the electrostatic bias into the power amplifier through the first transistor(Q1) and the second transistor(Q2). A third transistor(Q3) amplifies a signal in which the bias is permitted.
申请公布号 KR20020057394(A) 申请公布日期 2002.07.11
申请号 KR20010000403 申请日期 2001.01.04
申请人 LG INNOTEC CO., LTD. 发明人 NAM, HYEONG GI
分类号 H03F1/30;(IPC1-7):H03F1/30 主分类号 H03F1/30
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