| 摘要 |
PURPOSE: A complementary metal oxide semiconductor(CMOS) image sensor is provided to embody a high quality CMOS image sensor and to increase yield, by maintaining the characteristic of a product even if a power supply voltage of a broader range is used as compared with a conventional technology. CONSTITUTION: A row decoder(300) controls respective rows of a pixel array. The first, second and third drive unit drive a reset transistor of a unit pixel(400), a transfer transistor and a select transistor in the respective rows of the pixel array, connected to the row decoder. A sample and hold circuit unit(320) samples and holds a reference voltage from the pixel and a signal voltage, connected to the output terminal of the unit pixel. A switching unit is enabled only when the reference voltage of a dummy pixel array is read and switches the reference voltage of the dummy pixel array output from the sample and hold circuit unit, connected to the sample and hold circuit unit. A comparison unit(330) compares the reference voltage of the dummy pixel array switched by the switching unit with a target reference voltage arbitrarily determined according to a power supply voltage or process variation. A counting unit(340) receives the comparison result of the comparison unit and counts the number of 1's and 0's. A control unit(350) controls the first, second and third drive unit in response to the counting result of the counting unit.
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