Plasma processing apparatus suitable for power supply of higher frequency

摘要

A plasma processing apparatus has a plasma processing chamber, a radiofrequency generator, and an matching circuit. The plasma processing chamber includes a plasma excitation electrode and a susceptor electrode for exciting a plasma. The radiofrequency generator is connected to plasma excitation electrode. The matching circuit matches the impedance between the plasma processing chamber and the radiofrequency generator. A capacitance which is 26 times a plasma electrode capacitance Ce between the plasma excitation electrode and the susceptor electrode is greater than a loss capacitance CX between the plasma excitation electrode and ground potential positions which are DC-grounded.